Morphology and surface reconstructions of m-plane GaN
نویسندگان
چکیده
M-plane GaN(1 1 00) is grown by plasma assisted molecular beam epitaxy on ZnO(1 1 00) substrates. A low-temperature GaN buffer layer is found to be necessary to obtain good structural quality of the films. Well oriented (1 1 00) GaN films are obtained, with a slate like surface morphology. On the GaN(1 1 00) surfaces, reconstructions with symmetry of c(2x2) and approximate "4×5" are found under Nand Ga-rich conditions, respectively. We propose a model for Ga-rich conditions with the "4×5" structure consisting of 2 ≥ monolayers of Ga terminating the GaN surface.
منابع مشابه
Morphology and surface reconstructions of GaN(1 1 00) surfaces
GaN is grown by plasma assisted molecular beam epitaxy on ZnO(1 1 00) substrates. Well-oriented (1 1 00) GaN surfaces are obtained, and (1 1 01) oriented facets are also observed. On the GaN(1 1 00) surfaces under Ga-rich conditions a surface reconstruction with approximate symmetry of "4×5" is found. A model is proposed in which this reconstruction consists of 2 ≥ monolayers of Ga terminating ...
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